{"id":4266,"identifier":"FK2/WR6MAO","persistentUrl":"https://doi.org/10.34820/FK2/WR6MAO","protocol":"doi","authority":"10.34820","publisher":"Telkom University Dataverse","publicationDate":"2022-03-17","storageIdentifier":"file://10.34820/FK2/WR6MAO","datasetVersion":{"id":41,"datasetId":4266,"datasetPersistentId":"doi:10.34820/FK2/WR6MAO","storageIdentifier":"file://10.34820/FK2/WR6MAO","versionNumber":1,"versionMinorNumber":0,"versionState":"RELEASED","lastUpdateTime":"2022-03-17T05:07:49Z","releaseTime":"2022-03-17T05:07:49Z","createTime":"2022-03-17T05:05:39Z","license":"CC0","termsOfUse":"CC0 Waiver","fileAccessRequest":false,"metadataBlocks":{"citation":{"displayName":"Citation Metadata","fields":[{"typeName":"title","multiple":false,"typeClass":"primitive","value":"Uniaxial strain-induced electronic property alterations of MoS2 monolayer"},{"typeName":"author","multiple":true,"typeClass":"compound","value":[{"authorName":{"typeName":"authorName","multiple":false,"typeClass":"primitive","value":"PURI HANDAYANI., ISMUDIATI"},"authorAffiliation":{"typeName":"authorAffiliation","multiple":false,"typeClass":"primitive","value":"Engineering Physics, Telkom University"},"authorIdentifierScheme":{"typeName":"authorIdentifierScheme","multiple":false,"typeClass":"controlledVocabulary","value":"ORCID"}}]},{"typeName":"datasetContact","multiple":true,"typeClass":"compound","value":[{"datasetContactName":{"typeName":"datasetContactName","multiple":false,"typeClass":"primitive","value":"PURI H., ISMUDIATI"},"datasetContactAffiliation":{"typeName":"datasetContactAffiliation","multiple":false,"typeClass":"primitive","value":"Engineering Physics, Telkom University"},"datasetContactEmail":{"typeName":"datasetContactEmail","multiple":false,"typeClass":"primitive","value":"iphandayani@telkomuniversity.ac.id"}}]},{"typeName":"dsDescription","multiple":true,"typeClass":"compound","value":[{"dsDescriptionValue":{"typeName":"dsDescriptionValue","multiple":false,"typeClass":"primitive","value":"The MoS2 has attached interest due to its strained tuned\nelectronic and optical properties which open promising application in\nstrain engineering devices. In this study, we investigate the uniaxial strain\neffect on the electronic properties of MoS2 monolayer by first-principles\ncalculations. Our calculation shows the crossover of the K ― K direct to \n―K indirect transition occurs at a strain of 1.743%. In addition, we also\nobserved a strong correlation between bandgap modification and the\ndensity of states (DOS) of Mo-4𝑑 and S-3𝑝 at valence band maximum and\nconduction band minimum. We propose that the interatomic distance\nmodified by the uniaxial strain along 𝑎-axis does not only create different\nrates of bandgap alteration but also affects the Mo-4𝑑 DOS and possible\nelectronic transitions. This study points to the mechanism behind the\nelectronic structure modification of two-dimensional MoS2 monolayer,\nwhich might have important implication on intervalley transitions."}}]},{"typeName":"subject","multiple":true,"typeClass":"controlledVocabulary","value":["Physics"]},{"typeName":"keyword","multiple":true,"typeClass":"compound","value":[{"keywordVocabularyURI":{"typeName":"keywordVocabularyURI","multiple":false,"typeClass":"primitive","value":"https://iopscience.iop.org/article/10.1088/2043-6262/ac4aed/meta"}}]},{"typeName":"depositor","multiple":false,"typeClass":"primitive","value":"PURI HANDAYANI, ISMUDIATI"},{"typeName":"dateOfDeposit","multiple":false,"typeClass":"primitive","value":"2022-03-17"}]}},"files":[{"label":"ANSN-2021-0181.R1_Proof_hi (1).pdf","restricted":false,"version":1,"datasetVersionId":41,"dataFile":{"id":4267,"persistentId":"doi:10.34820/FK2/WR6MAO/EWLIVY","pidURL":"https://doi.org/10.34820/FK2/WR6MAO/EWLIVY","filename":"ANSN-2021-0181.R1_Proof_hi (1).pdf","contentType":"application/pdf","filesize":1755525,"storageIdentifier":"file://17f964381c6-c81351da8777","rootDataFileId":-1,"md5":"ee5d3ef43c82c9957d1d743276664bbb","checksum":{"type":"MD5","value":"ee5d3ef43c82c9957d1d743276664bbb"},"creationDate":"2022-03-17"}}],"citation":"PURI HANDAYANI., ISMUDIATI, 2022, \"Uniaxial strain-induced electronic property alterations of MoS2 monolayer\", https://doi.org/10.34820/FK2/WR6MAO, Telkom University Dataverse, V1"}}